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Persamaan Transistor D965 High Voltage
Persamaan Transistor D965 Datasheet

S8050 Pin Description

Persamaan transistor untuk pesawat tv sangat diperlukan hampir semua teknisi elektronik yang bergerak di service atau perbaikan pesawat tv. Fungsi persamaan transistor pada pesawat tv adalah untuk membantu mencari datasheet pada berbagai jenis transistor yang banyak dipakai pada pesawat tv. Begitu juga dengan beberapa transistor lainnya seperti transistor 2n3055, d965, 2n3904, c6090, dll. Fungsinya adalah, saat kita membeli sebuah transistor tertentu, namun transistor tersebut sedang kosong atau habis, anda bisa menggantinya dengan transistor lain yang sesuai dengan persamaannya.

D965 datasheet, D965 datasheets, D965 pdf, D965 circuit: JIANGSU - TRANSISTOR? NPN?,alldatasheet, datasheet, Datasheet search site for Electronic Components. The 2SD965 transistor might have a current gain anywhere between 230 and 600. The gain of the 2SD965Q will be in the range from 230 to 380, 2SD965R ranges from 340 to 600. Sometimes the '2S' prefix is not marked on the package - the 2SD965 transistor might be marked 'D965'.

Pin Number	Pin Name	Description
1	Emitter	Current Drains out through emitter
2	Base	Controls the biasing of transistor
3	Collector	Current flows in through collector

Features

Low Voltage, High Current NPN Transistor
Small Signal Transistor
Maximum Power: 2 Watts
Maximum DC Current Gain (hFE) is 400
Continuous Collector current (IC) is 700mA
Base- Emitter Voltage (VBE) is 5V
Collector-Emitter Voltage (VCE) is 20V
Collector-Base Voltage (VCB) is 30V
High Used in push-pull configuration doe Class B amplifiers
Available in To-92 Package

Note: Complete Technical Details can be found at the S8050 datasheet given at the end of this page.

Persamaan Transistor D965 High Voltage

Complementary PNP Transistors

S8550

Alternative NPN Transistors

S9014, MPSA42, SS8050, BC547, 2N3904, 2N2369, 2N3055, 2N3904, 2N3906

Persamaan Transistor D965 Datasheet

S8050 Equivalent Transistors

2N5830, S9013

Brief Description on S8050

S8050 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. It has a maximum gain value of 400; this value determines the amplification capacity of the transistor normally S8050. Since it is very high it is normally used for amplification purposes. However at a normal operating collector current the typical value of gain will be 110. The maximum amount of current that could flow through the Collector pin is 700mA, hence we cannot drive loads that consume more than 700mA using this transistor. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 5mA.

When this transistor is fully biased then it can allow a maximum of 700mA to flow across the collector and emitter. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (VCE) or Collector-Base (VCB) could be 20V and 30V respectively. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region.

S8050 in Push-Pull Configuration

As mentioned in the features the S8050 transistor is commonly used in push pull configuration with Class B amplifier. So let us discuss how that is done.

A push pull amplifier, commonly known as Class B amplifier is type of multistage amplifier commonly used for audio amplification of loudspeakers. It is very simple to construct and requires two identical complimentary transistors operate. By complimentary it means that we need a NPN transistor and its equivalent PNP transistor. Like here the NPN transistor will be S8050 and its equivalent PNP transistor will be S8550. A simple circuit diagram of the Class B amplifier with the using the S8050 is shown below.

Applications

Audio Amplification Circuits
Class B Amplifiers
Push pull Transistors
Circuits where high gain is required
Low signal applications

2D model of the component

If you are designing a PCB or Perf board with this component then the following picture from the S8050 transistor Datasheet Revit serial number 2018. will be useful to know its package type and dimensions. Nakamichi cd 45z manual.

Transistor Tutorial Includes:
Transistor basicsGain: Hfe, hfe & BetaTransistor specificationsTransistor and diode numbering codesChoosing replacement transistors

When working with electronics equipment, either in electronics circuit design, build or repair, it is sometimes necessary to choose a replacement transistor. Either the type of transistor may not be to hand, or it may not be available.

Fortunately it is normally possible to use a replacement transistor type as there is often a considerable degree of overlap between the specifications of different types of transistor, and by looking at the basic specifications it is normally possible to choose the correct transistor replacements.

This explanation is focussed on bipolar transistors, but it is possible to apply similar logic to other electronic components including field effect transistors to ensure that suitable replacements can be found.

When looking for suitable transistor replacements it is necessary to look at the main specifications for the transistor. Once the transistor specifications and parameters have been ascertained, it is possible to check for other replacement transistor types with similar parameters that will be able to operate within the circuit in question.

When considering any possible replacement transistors, it is necessary to look at a variety of parameters. These will include the basic parameters of the transistor operation performance. They will also include the environmentally related parameters, and the physical parameters. All these need to be taken into account when choosing a suitable replacement transistor.

Looking at the basic transistor parameters

Fortunately many transistors used in electronic circuit design are general purpose types. Their specifications are not particularly exacting and a variety of general purpose transistors could be used. Today, the performance of even general purpose transistors is exceedingly high and they can be used in a variety of applications.

However a much closer look must be taken at transistors that fulfil a more exacting role. Their specifications need to be examined more closely to ensure that any substitutes will have a similar specification.

When looking for a suitable transistor replacement some of the basic transistor parameters that need to be considered include the following:

Semiconductor material used: Most transistors will either be germanium or silicon. Other types are normally only used in very specialist applications.
It is important to know what type the transistor is because there is a difference in the base emitter forward bias voltage drop. For germanium it is around 0.2 - 0.3 volts and for silicon it is around 0.6 volts. The circuit will be designed around a particular voltage drop.
Polarity: It is absolutely imperative to find out whether the transistor is either NPN or PNP variety. Install the incorrect type and it experience the inverse of all the voltages it would expect and is likely to be destroyed.
General application: Although it is not always necessary to exactly match the intended purpose for the transistor, a variety of areas of its p